IndiumV3, Main, Repository, bibRecord, 003324

Characterization of SiGe-Detector Arrays for Visible-NIR Imaging Sensor Applications

Identifieur interne : 003324 ( Main/Repository ); précédent : 003323; suivant : 003325

Characterization of SiGe-Detector Arrays for Visible-NIR Imaging Sensor Applications

Auteurs : RBID : Pascal:12-0009043

Descripteurs français

Pascal (Inist)
- Traitement signal, Matrice détecteur, Matrice plan focal, Dispositif microélectromécanique, Imagerie, Propriété optique, Température ambiante, Composé ternaire, Gallium Arséniure, Indium Arséniure, Matériau capteur, Silicium, Bolomètre, As Ga In, InGaAs, HgCdTe, 8585, 0757K.

English descriptors

KwdEn :
- Bolometer, Detector array, Focal plane arrays, Gallium Arsenides, Imagery, Indium Arsenides, Microelectromechanical device, Optical properties, Room temperature, Sensor materials, Signal processing, Silicon, Ternary compound.

Abstract

SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We present results on the approach and device design for reducing the dark current in SiGe detector arrays. The electrical and optical properties of SiGe arrays at room temperature are discussed. We also discuss future integration path for SiGe devices with Si-MEMS Bolometers.

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Pascal:12-0009043

Le document en format XML

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<term>Imagery</term>
<term>Indium Arsenides</term>
<term>Microelectromechanical device</term>
<term>Optical properties</term>
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<term>Dispositif microélectromécanique</term>
<term>Imagerie</term>
<term>Propriété optique</term>
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<term>Matériau capteur</term>
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<front><div type="abstract" xml:lang="en">SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We present results on the approach and device design for reducing the dark current in SiGe detector arrays. The electrical and optical properties of SiGe arrays at room temperature are discussed. We also discuss future integration path for SiGe devices with Si-MEMS Bolometers.</div>
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Characterization of SiGe-Detector Arrays for Visible-NIR Imaging Sensor Applications

Characterization of SiGe-Detector Arrays for Visible-NIR Imaging Sensor Applications

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